Humberto Campanella's Acoustic Wave and Electromechanical Resonators: Concept to PDF

By Humberto Campanella

ISBN-10: 1607839776

ISBN-13: 9781607839774

ISBN-10: 1607839784

ISBN-13: 9781607839781

This groundbreaking e-book provide you with a complete figuring out of FBAR (thin-film bulk acoustic wave resonator), MEMS (microelectomechanical system), and NEMS (nanoelectromechanical procedure) resonators. For the 1st time anyplace, you discover large assurance of those units at either the know-how and alertness degrees. This useful reference provide you with tips in layout, fabrication, and characterization of FBARs, MEMS and NEBS. It discusses the combination of those units with usual CMOS (complementary-metal-oxide-semiconductor) applied sciences, and their software to sensing and RF structures. furthermore, this one-stop source seems to be on the major features, ameliorations, and barriers of FBAR, MEMS, and NEMS units, supporting you to settle on the proper ways to your tasks. Over 280 illustrations and greater than one hundred thirty equations help key themes during the ebook.

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Additional info for Acoustic Wave and Electromechanical Resonators: Concept to Key Applications (Integrated Microsystems)

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15 The production cycle of MEMS and NEMS resonators. electrode design and contact pad area, dicing areas (if needed), or via holes for interconnection (if needed). If we intend to fabricate the resonator by using the layers of a microelectronic process, we need to choose the appropriate layers of the technology. Later in Chapter 7, we will study the integration strategies for this purpose. Then, we perform analytical and finite element modeling (FEM) of the resonator. In a first approximation, the design equations presented in the previous section are enough to estimate the spectral range in which we expect to find the resonance frequency.

Microsystem Engineering of Lab-on-a-Chip Devices, New York: John Wiley & Sons, 2004. [12] Herold, K. , and A. ), Lab-on-a-Chip Technology: Fabrication and Microfluidics, San Francisco, CA: Caister Academic Press, 2009. [13] Nathanson, H. , and R. A. Wickstrom, “The Resonant Gate Transistor,” IEEE Trans. , Vol. 14, 1967, pp. 117–133. [14] Southwest Center for Microsystems Education and the University of New Mexico, History of Microelectomechanical Systems (MEMS), 2008. , “NEXUS_MNT_Market_Report_III-2005-2009,” NEXUS Task Force (coordination: WTC), 2004.

Deposited SiO2 is obtained through thin-film deposition techniques, and it can be processed on Si or on other substrates as well. The obtained oxide may have thicknesses of hundreds of nanometers and is, in general, of better quality than the thermal oxide, thus exhibiting higher resistivity and dielectric properties. The deposition techniques of SiO2 are common to other dielectric materials, as we review in the following section. 3 Dielectric Layer Deposition Dielectric layers—as SiO2—can be deposited using a variety of techniques, such as epitaxial growing, chemical vapor deposition (CVD), and molecular-beam growing.

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Acoustic Wave and Electromechanical Resonators: Concept to Key Applications (Integrated Microsystems) by Humberto Campanella


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